Characteristic temperature of a 2 µm InGaSb/AlGaAsSb mode-locked quantum well laser

• المؤلفون الرئيسيون: Li, Xiang, Wang, Hong, Qiao, Zhongliang, Guo, Xin, Wang, Wanjun, Ng, Geok Ing, Liu, Chongyang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2018
• الموضوعات: Semiconductor Lasers; Mode-locked Lasers
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/88343; http://hdl.handle.net/10220/44689
• المؤسسة: Nanyang Technological University

Mode locking is achieved in a 2 μm GaSb-based laser up to 60 °C. The laser has a T0 of ~82 K at room temperature, and the absorber bias voltage has little effect on T0.