Failure analysis of bond pad metal peeling using FIB and AFM
Aluminum bond pads on semiconductor chips play an important role in chips functionality and reliability. Bond pad peeling during wire bonding process results in yield reduction. The failure mechanisms of the peeling must be identified so that potential reliability problem of poor bond pad adhesion c...
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sg-ntu-dr.10356-915992020-03-07T14:02:41Z Failure analysis of bond pad metal peeling using FIB and AFM Tan, Cher Ming Er, Eddie Hua, Younan Chai, Vincent Siew Heong School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Aluminum bond pads on semiconductor chips play an important role in chips functionality and reliability. Bond pad peeling during wire bonding process results in yield reduction. The failure mechanisms of the peeling must be identified so that potential reliability problem of poor bond pad adhesion can be avoided. In this work, FIB, SEM, EDX, and AFM are used to identify the root causes of the peeling. The possible root causes are found to be the presence of an extra layer of thickness of 0.14 µm and the poly-silicon surface roughness asperity due to prolonged BOE etching time. Published version 2009-06-23T03:21:38Z 2019-12-06T18:08:40Z 2009-06-23T03:21:38Z 2019-12-06T18:08:40Z 1998 1998 Journal Article Tan, C. M., Er, E., Hua, Y., & Chai, V. (1998). Failure analysis of bond pad metal peeling using FIB and AFM.IEEE Transactions on Components, Packaging, And Manufacturing Technology-Part A, 21(4), 585-591. 1070-9886 https://hdl.handle.net/10356/91599 http://hdl.handle.net/10220/4656 10.1109/95.740049 en IEEE transactions on components, packaging, and manufacturing technology-part A © 1998 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 7 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Tan, Cher Ming Er, Eddie Hua, Younan Chai, Vincent Siew Heong Failure analysis of bond pad metal peeling using FIB and AFM |
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Aluminum bond pads on semiconductor chips play an important role in chips functionality and reliability. Bond pad peeling during wire bonding process results in yield reduction. The failure mechanisms of the peeling must be identified so that potential reliability problem of poor bond pad adhesion can be avoided. In this work, FIB, SEM, EDX, and AFM are used to identify the root causes of the peeling. The possible root causes are found to be the presence of an extra layer of thickness of 0.14 µm and the poly-silicon surface roughness asperity due to prolonged BOE etching time. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Tan, Cher Ming Er, Eddie Hua, Younan Chai, Vincent Siew Heong |
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Article |
author |
Tan, Cher Ming Er, Eddie Hua, Younan Chai, Vincent Siew Heong |
author_sort |
Tan, Cher Ming |
title |
Failure analysis of bond pad metal peeling using FIB and AFM |
title_short |
Failure analysis of bond pad metal peeling using FIB and AFM |
title_full |
Failure analysis of bond pad metal peeling using FIB and AFM |
title_fullStr |
Failure analysis of bond pad metal peeling using FIB and AFM |
title_full_unstemmed |
Failure analysis of bond pad metal peeling using FIB and AFM |
title_sort |
failure analysis of bond pad metal peeling using fib and afm |
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2009 |
url |
https://hdl.handle.net/10356/91599 http://hdl.handle.net/10220/4656 |
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1681041336801689600 |