Improved NiSi salicide process using presilicide N2+ implant for MOSFETs
An improved Ni salicide process has been developed by incorporating nitrogen (N+ 2 ) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stabilit...
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| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | English |
| Published: |
2012
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/92041 http://hdl.handle.net/10220/8341 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | An improved Ni salicide process has been developed
by incorporating nitrogen (N+
2 ) implant prior to Ni deposition
to widen the salicide processing temperature window. Salicided
poly-Si gate and active regions of different linewidths show
improved thermal stability with low sheet resistance up to a salicidation
temperature of 700 and 750 °C, respectively. Nitrogen was
found to be confined within the NiSi layer and reduced agglomeration
of the silicide. Phase transformation to the undesirable
high resistivity NiSi2 phase was delayed, likely due to a change
in the interfacial energy. The electrical results of N+2 implanted
Ni-salicided PMOSFETs show higher drive current and lower
junction leakage as compared to devices with no N+2 implant. |
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