Improved NiSi salicide process using presilicide N2+ implant for MOSFETs

• Main Authors: Wee, A. T. S., Chan, L., Mangelinck, D., Lee, Pooi See, Pey, Kin Leong, Ding, Jun
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2012
• 主題: DRNTU::Engineering::Materials
• 在線閱讀: https://hdl.handle.net/10356/92041; http://hdl.handle.net/10220/8341

An improved Ni salicide process has been developed by incorporating nitrogen (N+ 2 ) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stabilit...