Improved NiSi salicide process using presilicide N2+ implant for MOSFETs

• Main Authors: Wee, A. T. S., Chan, L., Mangelinck, D., Lee, Pooi See, Pey, Kin Leong, Ding, Jun
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/92041; http://hdl.handle.net/10220/8341
• Institution: Nanyang Technological University

An improved Ni salicide process has been developed by incorporating nitrogen (N+ 2 ) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stability with low sheet resistance up to a salicidation temperature of 700 and 750 °C, respectively. Nitrogen was found to be confined within the NiSi layer and reduced agglomeration of the silicide. Phase transformation to the undesirable high resistivity NiSi2 phase was delayed, likely due to a change in the interfacial energy. The electrical results of N+2 implanted Ni-salicided PMOSFETs show higher drive current and lower junction leakage as compared to devices with no N+2 implant.