Improved NiSi salicide process using presilicide N2+ implant for MOSFETs

• المؤلفون الرئيسيون: Wee, A. T. S., Chan, L., Mangelinck, D., Lee, Pooi See, Pey, Kin Leong, Ding, Jun
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/92041; http://hdl.handle.net/10220/8341

An improved Ni salicide process has been developed by incorporating nitrogen (N+ 2 ) implant prior to Ni deposition to widen the salicide processing temperature window. Salicided poly-Si gate and active regions of different linewidths show improved thermal stabilit...