Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
Recently, AlGaN/GaN HEMTs grown on 100 mm diameter Si using plasma assisted molecular beam epitaxy (PA-MBE) have been demonstrated [1,2]. In these structures, the growth rate is limited by the active nitrogen species available from the nitrogen plasma. Co...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2011
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| Subjects: | |
| Online Access: | https://hdl.handle.net/10356/92221 http://hdl.handle.net/10220/7079 |
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| Institution: | Nanyang Technological University |
| Language: | English |
| Summary: | Recently, AlGaN/GaN HEMTs grown on 100 mm diameter Si using plasma assisted
molecular beam epitaxy (PA-MBE) have been demonstrated [1,2]. In these structures, the
growth rate is limited by the active nitrogen species available from the nitrogen plasma.
Consequently, longer growth times are required to achieve thicker buffer layer necessary for
the device structures. However, the narrow growth widow for the GaN layer in PA-MBE
technique is affected by the fluctuation in substrate temperature and material fluxes during
the long growth period. |
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