Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE

Recently, AlGaN/GaN HEMTs grown on 100 mm diameter Si using plasma assisted molecular beam epitaxy (PA-MBE) have been demonstrated [1,2]. In these structures, the growth rate is limited by the active nitrogen species available from the nitrogen plasma. Co...

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Main Authors:	Agrawal, M., Radhakrishnan, K., Sun, Z. Z., Dharmarasu, Nethaji
Other Authors:	School of Electrical and Electronic Engineering
Format:	Conference or Workshop Item
Language:	English
Published:	2011
Subjects:	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
Online Access:	https://hdl.handle.net/10356/92221 http://hdl.handle.net/10220/7079
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Institution:	Nanyang Technological University
Language:	English

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spelling	sg-ntu-dr.10356-922212019-12-06T18:19:31Z Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE Agrawal, M. Radhakrishnan, K. Sun, Z. Z. Dharmarasu, Nethaji School of Electrical and Electronic Engineering International Conference on Nitride Semiconductors (9th : 2011 : Glasgow, Scotland, UK) DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Recently, AlGaN/GaN HEMTs grown on 100 mm diameter Si using plasma assisted molecular beam epitaxy (PA-MBE) have been demonstrated [1,2]. In these structures, the growth rate is limited by the active nitrogen species available from the nitrogen plasma. Consequently, longer growth times are required to achieve thicker buffer layer necessary for the device structures. However, the narrow growth widow for the GaN layer in PA-MBE technique is affected by the fluctuation in substrate temperature and material fluxes during the long growth period. Accepted version 2011-09-16T01:02:09Z 2019-12-06T18:19:31Z 2011-09-16T01:02:09Z 2019-12-06T18:19:31Z 2011 2011 Conference Paper Dharmarasu, N., Agrawal, M., Radhakrishnan, K., & Sun, Z. Z. (2011). Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE. Paper presented at the 9th International Conference on Nitride Semiconductors. https://hdl.handle.net/10356/92221 http://hdl.handle.net/10220/7079 159550 en © 2011 9th International Conference on Nitride Semiconductors. This is the author created version of a work that has been peer reviewed and accepted for publication by 9th International Conference on Nitride Semiconductors. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The official conference website is: http://www.icns9.org/. 1 p. application/pdf
institution	Nanyang Technological University
building	NTU Library
country	Singapore
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
spellingShingle	DRNTU::Engineering::Electrical and electronic engineering::Semiconductors Agrawal, M. Radhakrishnan, K. Sun, Z. Z. Dharmarasu, Nethaji Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
description	Recently, AlGaN/GaN HEMTs grown on 100 mm diameter Si using plasma assisted molecular beam epitaxy (PA-MBE) have been demonstrated [1,2]. In these structures, the growth rate is limited by the active nitrogen species available from the nitrogen plasma. Consequently, longer growth times are required to achieve thicker buffer layer necessary for the device structures. However, the narrow growth widow for the GaN layer in PA-MBE technique is affected by the fluctuation in substrate temperature and material fluxes during the long growth period.
author2	School of Electrical and Electronic Engineering
author_facet	School of Electrical and Electronic Engineering Agrawal, M. Radhakrishnan, K. Sun, Z. Z. Dharmarasu, Nethaji
format	Conference or Workshop Item
author	Agrawal, M. Radhakrishnan, K. Sun, Z. Z. Dharmarasu, Nethaji
author_sort	Agrawal, M.
title	Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
title_short	Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
title_full	Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
title_fullStr	Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
title_full_unstemmed	Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE
title_sort	ga-bilayer controlled algan/gan hemt structure grown on si by pa-mbe
publishDate	2011
url	https://hdl.handle.net/10356/92221 http://hdl.handle.net/10220/7079
_version_	1681048216710152192

Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE

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