Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE

• المؤلفون الرئيسيون: Agrawal, M., Radhakrishnan, K., Sun, Z. Z., Dharmarasu, Nethaji
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2011
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/92221; http://hdl.handle.net/10220/7079
• المؤسسة: Nanyang Technological University

Recently, AlGaN/GaN HEMTs grown on 100 mm diameter Si using plasma assisted molecular beam epitaxy (PA-MBE) have been demonstrated [1,2]. In these structures, the growth rate is limited by the active nitrogen species available from the nitrogen plasma. Co...