Ga-bilayer controlled AlGaN/GaN HEMT structure grown on Si by PA-MBE

• Main Authors: Agrawal, M., Radhakrishnan, K., Sun, Z. Z., Dharmarasu, Nethaji
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Conference or Workshop Item
• 語言: English
• 出版: 2011
• 主題: DRNTU::Engineering::Electrical and electronic engineering::Semiconductors
• 在線閱讀: https://hdl.handle.net/10356/92221; http://hdl.handle.net/10220/7079
• 機構: Nanyang Technological University

Recently, AlGaN/GaN HEMTs grown on 100 mm diameter Si using plasma assisted molecular beam epitaxy (PA-MBE) have been demonstrated [1,2]. In these structures, the growth rate is limited by the active nitrogen species available from the nitrogen plasma. Co...