Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

• Main Authors: Cheng, Jian Gong, Wang, Junling, Dechakupt, Tanawadee, Trolier-McKinstry, Susan
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2011
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
• Online Access: https://hdl.handle.net/10356/93933; http://hdl.handle.net/10220/6913
• Institution: Nanyang Technological University

The crystallization temperature of Bi1.5Zn0.5Nb1.5O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ/cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures 400 °C makes integration with polymeric substrates possible.