Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

The crystallization temperature of Bi1.5Zn0.5Nb1.5O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found tha...

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Main Authors:	Cheng, Jian Gong, Wang, Junling, Dechakupt, Tanawadee, Trolier-McKinstry, Susan
Other Authors:	School of Materials Science & Engineering
Format:	Article
Language:	English
Published:	2011
Subjects:	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
Online Access:	https://hdl.handle.net/10356/93933 http://hdl.handle.net/10220/6913
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Institution:	Nanyang Technological University
Language:	English

id	sg-ntu-dr.10356-93933
record_format	dspace
spelling	sg-ntu-dr.10356-939332023-07-14T15:44:50Z Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing Cheng, Jian Gong Wang, Junling Dechakupt, Tanawadee Trolier-McKinstry, Susan School of Materials Science & Engineering DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films The crystallization temperature of Bi1.5Zn0.5Nb1.5O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ/cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures 400 °C makes integration with polymeric substrates possible. Published version 2011-07-18T08:12:09Z 2019-12-06T18:48:02Z 2011-07-18T08:12:09Z 2019-12-06T18:48:02Z 2005 2005 Journal Article Chen, J. G., Wang, J., Dechakupt, T., & Trolier-McKinstry, S. (2005). Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing. Applied Physics Letters, 87. https://hdl.handle.net/10356/93933 http://hdl.handle.net/10220/6913 10.1063/1.2140071 en Applied physics letters © 2005 American Institute of Physics. This paper was published in Applied Physics Letters and is made available as an electronic reprint (preprint) with permission of American Institute of Physics. The paper can be found at the following DOI: http://dx.doi.org/10.1063/1.2140071. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. application/pdf
institution	Nanyang Technological University
building	NTU Library
continent	Asia
country	Singapore Singapore
content_provider	NTU Library
collection	DR-NTU
language	English
topic	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films
spellingShingle	DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Thin films Cheng, Jian Gong Wang, Junling Dechakupt, Tanawadee Trolier-McKinstry, Susan Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing
description	The crystallization temperature of Bi1.5Zn0.5Nb1.5O6.5 (BZN) films was reduced by a combination of conventional heating and irradiation with a pulsed KrF excimer laser. Both the energy density and substrate temperature affect the properties of laser-annealed BZN films. It was found that the crystallinity and dielectric properties improved after a postannealing at 400 °C for 2 h in an oxygen atmosphere. BZN films crystallized with an energy density of 27 mJ/cm2 at a substrate temperature of 400 °C with postannealing showed dielectric properties comparable to those of rapid thermal annealed BZN films. Laser crystallization at substrate temperatures 400 °C makes integration with polymeric substrates possible.
author2	School of Materials Science & Engineering
author_facet	School of Materials Science & Engineering Cheng, Jian Gong Wang, Junling Dechakupt, Tanawadee Trolier-McKinstry, Susan
format	Article
author	Cheng, Jian Gong Wang, Junling Dechakupt, Tanawadee Trolier-McKinstry, Susan
author_sort	Cheng, Jian Gong
title	Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing
title_short	Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing
title_full	Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing
title_fullStr	Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing
title_full_unstemmed	Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing
title_sort	low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing
publishDate	2011
url	https://hdl.handle.net/10356/93933 http://hdl.handle.net/10220/6913
_version_	1772826410084204544

Low-temperature crystallized pyrochlore bismuth zinc niobate thin films by excimer laser annealing

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