Effect of copper TSV annealing on via protrusion for TSV wafer fabrication

Three-dimensional (3D) integrated circuit (IC) technologies are receiving increasing attention due to their capability to enhance microchip function and performance. While current efforts are focused on the 3D process development, adequate reliability of copper (Cu) through-silicon vias (TSVs) is es...

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Main Authors: Heryanto, A., Putra, W. N., Trigg, Alastair David, Gao, S., Kwon, W. S., Che, Faxing, Ang, X. F., Wei, J., Made, Riko I., Gan, Chee Lip, Pey, Kin Leong
Other Authors: School of Materials Science & Engineering
Format: Article
Language:English
Published: 2012
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Online Access:https://hdl.handle.net/10356/94515
http://hdl.handle.net/10220/8698
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-945152020-06-01T10:01:52Z Effect of copper TSV annealing on via protrusion for TSV wafer fabrication Heryanto, A. Putra, W. N. Trigg, Alastair David Gao, S. Kwon, W. S. Che, Faxing Ang, X. F. Wei, J. Made, Riko I. Gan, Chee Lip Pey, Kin Leong School of Materials Science & Engineering School of Electrical and Electronic Engineering DRNTU::Engineering::Materials Three-dimensional (3D) integrated circuit (IC) technologies are receiving increasing attention due to their capability to enhance microchip function and performance. While current efforts are focused on the 3D process development, adequate reliability of copper (Cu) through-silicon vias (TSVs) is essential for commercial high-volume manufacturing. Annealing a silicon device with copper TSVs causes high stresses in the copper and may cause a “pumping” phenomenon in which copper is forced out of the blind TSV to form a protrusion. This is a potential threat to the back-end interconnect structure, particularly for low-κ materials, since it can lead to cracking or delamination. In this work, we studied the phenomenon of Cu protrusion and microstructural changes during thermal annealing of a TSV wafer. The extruded Cu-TSV was observed using scanning electron microscopy (SEM), 3D profilometry, and atomic force microscopy (AFM). The electron backscatter diffraction (EBSD) technique was employed to study the grain orientation of Cu-TSV and evolution of the grain size as a function of annealing temperature. The elastic modulus and yield stress of copper were characterized using nanoindentation. A model for Cu protrusion is proposed to provide insight into the failure mechanism. The results help to solve a key TSV-related manufacturing yield and reliability challenge by enabling high-throughput TSV fabrication for 3D IC integration. 2012-10-03T07:13:45Z 2019-12-06T18:57:18Z 2012-10-03T07:13:45Z 2019-12-06T18:57:18Z 2012 2012 Journal Article Heryanto, A., Putra, W. N., Trigg, A. D., Gao, S., Kwon, W. S., Che, F., et al. (2012). Effect of copper TSV annealing on via protrusion for TSV wafer fabrication. Journal of electronic materials, 41(9), 2533-2542. 0361-5235 https://hdl.handle.net/10356/94515 http://hdl.handle.net/10220/8698 10.1007/s11664-012-2117-3 166545 en Journal of electronic materials © 2012 TMS.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials
spellingShingle DRNTU::Engineering::Materials
Heryanto, A.
Putra, W. N.
Trigg, Alastair David
Gao, S.
Kwon, W. S.
Che, Faxing
Ang, X. F.
Wei, J.
Made, Riko I.
Gan, Chee Lip
Pey, Kin Leong
Effect of copper TSV annealing on via protrusion for TSV wafer fabrication
description Three-dimensional (3D) integrated circuit (IC) technologies are receiving increasing attention due to their capability to enhance microchip function and performance. While current efforts are focused on the 3D process development, adequate reliability of copper (Cu) through-silicon vias (TSVs) is essential for commercial high-volume manufacturing. Annealing a silicon device with copper TSVs causes high stresses in the copper and may cause a “pumping” phenomenon in which copper is forced out of the blind TSV to form a protrusion. This is a potential threat to the back-end interconnect structure, particularly for low-κ materials, since it can lead to cracking or delamination. In this work, we studied the phenomenon of Cu protrusion and microstructural changes during thermal annealing of a TSV wafer. The extruded Cu-TSV was observed using scanning electron microscopy (SEM), 3D profilometry, and atomic force microscopy (AFM). The electron backscatter diffraction (EBSD) technique was employed to study the grain orientation of Cu-TSV and evolution of the grain size as a function of annealing temperature. The elastic modulus and yield stress of copper were characterized using nanoindentation. A model for Cu protrusion is proposed to provide insight into the failure mechanism. The results help to solve a key TSV-related manufacturing yield and reliability challenge by enabling high-throughput TSV fabrication for 3D IC integration.
author2 School of Materials Science & Engineering
author_facet School of Materials Science & Engineering
Heryanto, A.
Putra, W. N.
Trigg, Alastair David
Gao, S.
Kwon, W. S.
Che, Faxing
Ang, X. F.
Wei, J.
Made, Riko I.
Gan, Chee Lip
Pey, Kin Leong
format Article
author Heryanto, A.
Putra, W. N.
Trigg, Alastair David
Gao, S.
Kwon, W. S.
Che, Faxing
Ang, X. F.
Wei, J.
Made, Riko I.
Gan, Chee Lip
Pey, Kin Leong
author_sort Heryanto, A.
title Effect of copper TSV annealing on via protrusion for TSV wafer fabrication
title_short Effect of copper TSV annealing on via protrusion for TSV wafer fabrication
title_full Effect of copper TSV annealing on via protrusion for TSV wafer fabrication
title_fullStr Effect of copper TSV annealing on via protrusion for TSV wafer fabrication
title_full_unstemmed Effect of copper TSV annealing on via protrusion for TSV wafer fabrication
title_sort effect of copper tsv annealing on via protrusion for tsv wafer fabrication
publishDate 2012
url https://hdl.handle.net/10356/94515
http://hdl.handle.net/10220/8698
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