Effect of copper TSV annealing on via protrusion for TSV wafer fabrication
Three-dimensional (3D) integrated circuit (IC) technologies are receiving increasing attention due to their capability to enhance microchip function and performance. While current efforts are focused on the 3D process development, adequate reliability of copper (Cu) through-silicon vias (TSVs) is es...
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Main Authors: | , , , , , , , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2012
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/94515 http://hdl.handle.net/10220/8698 |
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Institution: | Nanyang Technological University |
Language: | English |
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