Effect of copper TSV annealing on via protrusion for TSV wafer fabrication

• Main Authors: Heryanto, A., Putra, W. N., Trigg, Alastair David, Gao, S., Kwon, W. S., Che, Faxing, Ang, X. F., Wei, J., Made, Riko I., Gan, Chee Lip, Pey, Kin Leong
• Other Authors: School of Materials Science & Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials
• Online Access: https://hdl.handle.net/10356/94515; http://hdl.handle.net/10220/8698
• Institution: Nanyang Technological University

Three-dimensional (3D) integrated circuit (IC) technologies are receiving increasing attention due to their capability to enhance microchip function and performance. While current efforts are focused on the 3D process development, adequate reliability of copper (Cu) through-silicon vias (TSVs) is es...