Effect of copper TSV annealing on via protrusion for TSV wafer fabrication

• المؤلفون الرئيسيون: Heryanto, A., Putra, W. N., Trigg, Alastair David, Gao, S., Kwon, W. S., Che, Faxing, Ang, X. F., Wei, J., Made, Riko I., Gan, Chee Lip, Pey, Kin Leong
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/94515; http://hdl.handle.net/10220/8698
• المؤسسة: Nanyang Technological University

Three-dimensional (3D) integrated circuit (IC) technologies are receiving increasing attention due to their capability to enhance microchip function and performance. While current efforts are focused on the 3D process development, adequate reliability of copper (Cu) through-silicon vias (TSVs) is es...