Study of the evolution of Cu-Cu bonding interface imperfection under direct current stressing for three dimensional integrated circuits

• المؤلفون الرئيسيون: Made, Riko I., Lan, Peng, Li, Hong Yu, Gan, Chee Lip, Tan, Chuan Seng
• مؤلفون آخرون: School of Materials Science & Engineering
• التنسيق: Conference or Workshop Item
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Materials::Metallic materials
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/94653; http://hdl.handle.net/10220/8182
• المؤسسة: Nanyang Technological University

While the ultimate goal of Cu interconnection in 3D-IC is to have Cu as both the glue layer and interconnection line, there has been numerous demonstration of Cu-Cu bonding that shows the bonding interface is not always perfect. This work investigates the evolution of Cu-Cu bond interface under prol...