Study of the evolution of Cu-Cu bonding interface imperfection under direct current stressing for three dimensional integrated circuits

• Main Authors: Made, Riko I., Lan, Peng, Li, Hong Yu, Gan, Chee Lip, Tan, Chuan Seng
• Other Authors: School of Materials Science & Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Materials::Metallic materials
• Online Access: https://hdl.handle.net/10356/94653; http://hdl.handle.net/10220/8182
• Institution: Nanyang Technological University

While the ultimate goal of Cu interconnection in 3D-IC is to have Cu as both the glue layer and interconnection line, there has been numerous demonstration of Cu-Cu bonding that shows the bonding interface is not always perfect. This work investigates the evolution of Cu-Cu bond interface under prol...