Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface

Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface

Metal to metal bonding, particularly Cu-Cu bonding, is an important part of three dimensional integrated circuits (3DICs) that utilizes wafer bonding. The use of Cu to Cu bonding in 3DICs is advantageous as it functions as both the glue layer and electrical interconnection. It has been observed that...

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Main Authors: Made, Riko I., Gan, Chee Lip, Tan, Chuan Seng
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2012
Subjects:
DRNTU::Engineering::Electrical and electronic engineering
Online Access:https://hdl.handle.net/10356/94656
http://hdl.handle.net/10220/8168
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-946562020-03-07T13:57:28Z Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface Made, Riko I. Gan, Chee Lip Tan, Chuan Seng School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Metal to metal bonding, particularly Cu-Cu bonding, is an important part of three dimensional integrated circuits (3DICs) that utilizes wafer bonding. The use of Cu to Cu bonding in 3DICs is advantageous as it functions as both the glue layer and electrical interconnection. It has been observed that the contact resistance of bonded Cu interface could be decreased under direct current stressing. In this paper the mentioned phenomena is modeled and simulated. Electromigration induced contact resistance reduction of bonded interconnects may provide a method for post-bonding bond property improvement for 3DICs Published version 2012-05-29T06:58:07Z 2019-12-06T18:59:44Z 2012-05-29T06:58:07Z 2019-12-06T18:59:44Z 2010 2010 Journal Article Made, R. I., Gan, C. L. & Tan, C. S. (2010). Modeling of Electromigration Induced Contact Resistance Reduction of Cu-Cu Bonded Interface. ECS Transactions, 33(12), 23-34. https://hdl.handle.net/10356/94656 http://hdl.handle.net/10220/8168 10.1149/1.3501031 157116 en ECS transactions ©2010 The Electrochemical Society. This paper was published in ECS Transactions and is made available as an electronic reprint (preprint) with permission of The Electrochemical Society. The paper can be found at the following official URL: [DOI: http://dx.doi.org/10.1149/1.3501031 ].  One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplication of any material in this paper for a fee or for commercial purposes, or modification of the content of the paper is prohibited and is subject to penalties under law. 12 p. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Made, Riko I.
Gan, Chee Lip
Tan, Chuan Seng
Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface
description Metal to metal bonding, particularly Cu-Cu bonding, is an important part of three dimensional integrated circuits (3DICs) that utilizes wafer bonding. The use of Cu to Cu bonding in 3DICs is advantageous as it functions as both the glue layer and electrical interconnection. It has been observed that the contact resistance of bonded Cu interface could be decreased under direct current stressing. In this paper the mentioned phenomena is modeled and simulated. Electromigration induced contact resistance reduction of bonded interconnects may provide a method for post-bonding bond property improvement for 3DICs
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Made, Riko I.
Gan, Chee Lip
Tan, Chuan Seng
format Article
author Made, Riko I.
Gan, Chee Lip
Tan, Chuan Seng
author_sort Made, Riko I.
title Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface
title_short Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface
title_full Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface
title_fullStr Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface
title_full_unstemmed Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface
title_sort modeling of electromigration induced contact resistance reduction of cu-cu bonded interface
publishDate 2012
url https://hdl.handle.net/10356/94656
http://hdl.handle.net/10220/8168
_version_ 1681044618845618176

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