Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface

• Main Authors: Made, Riko I., Gan, Chee Lip, Tan, Chuan Seng
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2012
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/94656; http://hdl.handle.net/10220/8168
• Institution: Nanyang Technological University

Metal to metal bonding, particularly Cu-Cu bonding, is an important part of three dimensional integrated circuits (3DICs) that utilizes wafer bonding. The use of Cu to Cu bonding in 3DICs is advantageous as it functions as both the glue layer and electrical interconnection. It has been observed that...