Modeling of electromigration induced contact resistance reduction of Cu-Cu bonded interface

• المؤلفون الرئيسيون: Made, Riko I., Gan, Chee Lip, Tan, Chuan Seng
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2012
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/94656; http://hdl.handle.net/10220/8168
• المؤسسة: Nanyang Technological University

Metal to metal bonding, particularly Cu-Cu bonding, is an important part of three dimensional integrated circuits (3DICs) that utilizes wafer bonding. The use of Cu to Cu bonding in 3DICs is advantageous as it functions as both the glue layer and electrical interconnection. It has been observed that...