Interfacial reaction between Sn-rich solders and Ni-based metallization
Solid state reaction between Sn-rich solders (Sn–3.5Ag and Sn–37Pb) and two types of Ni-based metallization (electroless Ni–P and sputtered Ni) has been studied. The growth rates of the main intermetallic compound (IMC), Ni3Sn4, at different aging temperatures are obtained and the activation energy...
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2012
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sg-ntu-dr.10356-947012023-07-14T15:51:56Z Interfacial reaction between Sn-rich solders and Ni-based metallization Kumar, A. Yeo, P. T. He, Min Qi, Guojun Chen, Zhong School of Materials Science & Engineering DRNTU::Engineering::Materials Solid state reaction between Sn-rich solders (Sn–3.5Ag and Sn–37Pb) and two types of Ni-based metallization (electroless Ni–P and sputtered Ni) has been studied. The growth rates of the main intermetallic compound (IMC), Ni3Sn4, at different aging temperatures are obtained and the activation energy calculated. Ni3Sn4 grows faster with Sn–3.5Ag solder than with Sn–37Pb solder under the same aging condition. The activation energy for the IMC growth with Ni–P metallization is higher than that with sputtered Ni metallization. Kirkendall voids are found inside Ni3P layer after thermal aging in the solder/Ni–P UBM systems. This is the result of unbalanced element diffusion in solid state reaction between Sn-rich solders and Ni–P metallization. No voids are formed in solder/Ni system. Accepted version 2012-05-28T04:26:21Z 2019-12-06T19:00:39Z 2012-05-28T04:26:21Z 2019-12-06T19:00:39Z 2004 2004 Journal Article He, M., Kumar, A., Yeo, P. T., Qi, G., & Chen, Z. (2004). Interfacial reaction between Sn-rich solders and Ni-based metallization. Thin Solid Films, 462-463, 387-394. https://hdl.handle.net/10356/94701 http://hdl.handle.net/10220/8149 10.1016/j.tsf.2004.05.062 en Thin solid films © 2004 Elsevier. This is the author created version of a work that has been peer reviewed and accepted for publication by Thin Solid Films, Elsevier. It incorporates referee’s comments but changes resulting from the publishing process, such as copyediting, structural formatting, may not be reflected in this document. The published version is available at: [http://dx.doi.org/10.1016/j.tsf.2004.05.062]. 27 p. application/pdf |
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DRNTU::Engineering::Materials Kumar, A. Yeo, P. T. He, Min Qi, Guojun Chen, Zhong Interfacial reaction between Sn-rich solders and Ni-based metallization |
| description |
Solid state reaction between Sn-rich solders (Sn–3.5Ag and Sn–37Pb) and two types of Ni-based metallization (electroless Ni–P and sputtered Ni) has been studied. The growth rates of the main intermetallic compound (IMC), Ni3Sn4, at different aging temperatures are obtained and the activation energy calculated. Ni3Sn4 grows faster with Sn–3.5Ag solder than with Sn–37Pb solder under the same aging condition. The activation energy for the IMC growth with Ni–P metallization is higher than that with sputtered Ni metallization. Kirkendall voids are found inside Ni3P layer after thermal aging in the solder/Ni–P UBM systems. This is the result of unbalanced element diffusion in solid state reaction between Sn-rich solders and Ni–P metallization. No voids are formed in solder/Ni system. |
| author2 |
School of Materials Science & Engineering |
| author_facet |
School of Materials Science & Engineering Kumar, A. Yeo, P. T. He, Min Qi, Guojun Chen, Zhong |
| format |
Article |
| author |
Kumar, A. Yeo, P. T. He, Min Qi, Guojun Chen, Zhong |
| author_sort |
Kumar, A. |
| title |
Interfacial reaction between Sn-rich solders and Ni-based metallization |
| title_short |
Interfacial reaction between Sn-rich solders and Ni-based metallization |
| title_full |
Interfacial reaction between Sn-rich solders and Ni-based metallization |
| title_fullStr |
Interfacial reaction between Sn-rich solders and Ni-based metallization |
| title_full_unstemmed |
Interfacial reaction between Sn-rich solders and Ni-based metallization |
| title_sort |
interfacial reaction between sn-rich solders and ni-based metallization |
| publishDate |
2012 |
| url |
https://hdl.handle.net/10356/94701 http://hdl.handle.net/10220/8149 |
| _version_ |
1772825838942683136 |