AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

• المؤلفون الرئيسيون: Dolmanan, S. B., Kajen, R. S., Bera, L. K., Teo, S. L., Wang, W. Z., Li, H., Lee, D., Han, S., Tripathy, Sudhiranjan, Lin, Vivian Kaixin, Tan, Joyce Pei Ying, Kumar, M. Krishna, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Todd, Shane, Lo, Guo-Qiang
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/95566; http://hdl.handle.net/10220/9346
• المؤسسة: Nanyang Technological University

This Letter reports on the epitaxial growth, characterization, and device characteristics of crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si(111) substrate. The total nitride stack thickness of the sample grown by the metal-organic chemical vapor deposition technique is about 3.3 ± 0.1 μm. The structural and optical properties of these layers are studied by cross-sectional scanning transmission electron microscopy, high-resolution x-ray diffraction, photoluminescence, and micro-Raman spectroscopy techniques. The top AlGaN/GaN heterointerfaces reveal the formation of a two-dimensional electron gas with average Hall mobility values in the range of 1800 to 1900 cm2/Vs across such 200 mm diameter GaN on Si(111) samples. The fabricated 1.5 μm-gate AlGaN/GaN high-electron-mobility transistors exhibited the drain current density of 660 mA/mm and extrinsic transconductance of 210 mS/mm. These experimental results show immense potential of 200-mm diameter GaN-on-silicon technology for electronic device applications.