AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si(111)

This Letter reports on the epitaxial growth, characterization, and device characteristics of crack-free AlGaN/GaN heterostructures on a 200 mm diameter Si(111) substrate. The total nitride stack thickness of the sample grown by the metal-organic chemical vapor deposition technique is about 3.3 ± 0.1...

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التفاصيل البيبلوغرافية
المؤلفون الرئيسيون:	Dolmanan, S. B., Kajen, R. S., Bera, L. K., Teo, S. L., Wang, W. Z., Li, H., Lee, D., Han, S., Tripathy, Sudhiranjan, Lin, Vivian Kaixin, Tan, Joyce Pei Ying, Kumar, M. Krishna, Arulkumaran, Subramaniam, Ng, Geok Ing, Vicknesh, Sahmuganathan, Todd, Shane, Lo, Guo-Qiang
مؤلفون آخرون:	School of Electrical and Electronic Engineering
التنسيق:	مقال
اللغة:	English
منشور في:	2013
الموضوعات:	DRNTU::Engineering::Electrical and electronic engineering::Electronic systems
الوصول للمادة أونلاين:	https://hdl.handle.net/10356/95566 http://hdl.handle.net/10220/9346
الوسوم:	إضافة وسم لا توجد وسوم, كن أول من يضع وسما على هذه التسجيلة!
المؤسسة:	Nanyang Technological University
اللغة:	English

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