Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

Deterministic conversion between memory and threshold resistive switching via tuning the strong electron correlation

Intensive investigations have been launched worldwide on the resistive switching (RS) phenomena in transition metal oxides due to both fascinating science and potential applications in next generation nonvolatile resistive random access memory (RRAM) devices. It is noteworthy that most of these oxid...

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書目詳細資料
Main Authors:	Peng, Haiyang, Li, Yongfeng, Lin, Wei Nan, Wang, Yu Zhan, Gao, Xing Yu, Wu, Tom
其他作者:	School of Physical and Mathematical Sciences
格式:	Article
語言:	English
出版:	2013
在線閱讀:	https://hdl.handle.net/10356/96101 http://hdl.handle.net/10220/10084
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	Nanyang Technological University
語言:	English

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