Triggering voltage for post-breakdown random telegraph noise in HfLaO dielectric metal gate metal-oxide-semiconductor field effect transistors and its reliability implications

• المؤلفون الرئيسيون: Liu, W. H., Pey, Kin Leong, Raghavan, Nagarajan, Wu, X., Bosman, Michel
• مؤلفون آخرون: School of Electrical and Electronic Engineering
• التنسيق: مقال
• اللغة: English
• منشور في: 2013
• الموضوعات: DRNTU::Engineering::Electrical and electronic engineering::Antennas, wave guides, microwaves, radar, radio
• الوصول للمادة أونلاين: https://hdl.handle.net/10356/96328; http://hdl.handle.net/10220/10027

We report a triggering voltage Vtrig for observing gate leakage current (Ig) random telegraph noise (RTN) in the post-breakdown regime of HfLaO dielectric metal gate stacks. Vtrig, the onset voltage to observe RTN in degraded dielectrics, is highly dependent on breakdown hardness, which is controlle...