Vertical silicon nanowire diode with nickel silicide induced dopant segregation

• Main Authors: Li, Xiang, Tan, Chuan Seng, Lu, Weijie, Pey, Kin Leong, Wang, Xinpeng, Chen, Zhixian, Navab, Singh, Leong, Kam Chew, Gan, Chee Lip
• 其他作者: School of Materials Science & Engineering
• 格式: Article
• 語言: English
• 出版: 2013
• 在線閱讀: https://hdl.handle.net/10356/96854; http://hdl.handle.net/10220/11667

Dopant segregated Schottky barrier (DSSB) and Schottky barrier (SB) vertical silicon nanowire (VSiNW) diodes were fabricated using industry complemetary metal oxide semiconductor field effect transistor (CMOS) processes to investigate the effects of segregated dopants at the silicide/silicon interfa...