Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors

• Main Authors: Tan, Eu Jin, Pey, Kin Leong, Singh, Navab, Chi, Dong Zhi, Lo, Guo-Qiang, Lee, Pooi See, Hoe, Keat Mun, Chin, Yoke King, Cui, Guangda
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/97040; http://hdl.handle.net/10220/10505
• Institution: Nanyang Technological University

Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal silicide S/D. Despite the use of a thick buried oxide (BOX) layer as the gate dielectric, the devices show good electrical characteristics with high Ion/Ioff ratio of ∼105, high drive current of ∼900 µA/µm, which are significantly higher than those previously reported Schottky S/D MOSFETs without barrier-modified junctions. The effect of physical characteristics such as metal-silicided junction depth, number of SiNW channels, and metal–semiconductor junction size were investigated and found to have a direct effect on the electrical performance of the devices. Current transport as a function of Schottky barrier height (Φbeff) modulation was also studied.