Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors
Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal silicide S/D. Despite the use of a thick buried oxide (BOX) layer as the gate d...
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sg-ntu-dr.10356-970402020-06-01T10:13:32Z Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors Tan, Eu Jin Pey, Kin Leong Singh, Navab Chi, Dong Zhi Lo, Guo-Qiang Lee, Pooi See Hoe, Keat Mun Chin, Yoke King Cui, Guangda School of Electrical and Electronic Engineering School of Materials Science & Engineering DRNTU::Engineering::Electrical and electronic engineering Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal silicide S/D. Despite the use of a thick buried oxide (BOX) layer as the gate dielectric, the devices show good electrical characteristics with high Ion/Ioff ratio of ∼105, high drive current of ∼900 µA/µm, which are significantly higher than those previously reported Schottky S/D MOSFETs without barrier-modified junctions. The effect of physical characteristics such as metal-silicided junction depth, number of SiNW channels, and metal–semiconductor junction size were investigated and found to have a direct effect on the electrical performance of the devices. Current transport as a function of Schottky barrier height (Φbeff) modulation was also studied. 2013-06-20T03:12:15Z 2019-12-06T19:38:09Z 2013-06-20T03:12:15Z 2019-12-06T19:38:09Z 2008 2008 Journal Article Tan, E. J., Pey, K. L., Singh, N., Chi, D. Z., Lo, G. Q., Lee, P. S., et al. (2008). Erbium silicided Schottky Source/Drain Silicon Nanowire N-Metal–Oxide–Semiconductor Field-Effect Transistors. Japanese Journal of Applied Physics, 47(4), 3277-3281. 1347-4065 https://hdl.handle.net/10356/97040 http://hdl.handle.net/10220/10505 10.1143/JJAP.47.3277 en Japanese journal of applied physics © 2008 The Japan Society of Applied Physics. |
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DRNTU::Engineering::Electrical and electronic engineering Tan, Eu Jin Pey, Kin Leong Singh, Navab Chi, Dong Zhi Lo, Guo-Qiang Lee, Pooi See Hoe, Keat Mun Chin, Yoke King Cui, Guangda Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors |
| description |
Schottky source/drain (S/D) N-metal–oxide–semiconductor-field-effect transistor (MOSFET) have been fabricated using a simplified top down process with silicon nanowires (SiNW) as the channel body and ErSi2-x as the metal silicide S/D. Despite the use of a thick buried oxide (BOX) layer as the gate dielectric, the devices show good electrical characteristics with high Ion/Ioff ratio of ∼105, high drive current of ∼900 µA/µm, which are significantly higher than those previously reported Schottky S/D MOSFETs without barrier-modified junctions. The effect of physical characteristics such as metal-silicided junction depth, number of SiNW channels, and metal–semiconductor junction size were investigated and found to have a direct effect on the electrical performance of the devices. Current transport as a function of Schottky barrier height (Φbeff) modulation was also studied. |
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School of Electrical and Electronic Engineering |
| author_facet |
School of Electrical and Electronic Engineering Tan, Eu Jin Pey, Kin Leong Singh, Navab Chi, Dong Zhi Lo, Guo-Qiang Lee, Pooi See Hoe, Keat Mun Chin, Yoke King Cui, Guangda |
| format |
Article |
| author |
Tan, Eu Jin Pey, Kin Leong Singh, Navab Chi, Dong Zhi Lo, Guo-Qiang Lee, Pooi See Hoe, Keat Mun Chin, Yoke King Cui, Guangda |
| author_sort |
Tan, Eu Jin |
| title |
Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors |
| title_short |
Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors |
| title_full |
Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors |
| title_fullStr |
Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors |
| title_full_unstemmed |
Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors |
| title_sort |
erbium silicided schottky source/drain silicon nanowire n-metal–oxide–semiconductor field-effect transistors |
| publishDate |
2013 |
| url |
https://hdl.handle.net/10356/97040 http://hdl.handle.net/10220/10505 |
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1681059683924705280 |