Design optimization of pulsed-mode electromechanical nonvolatile memory

Storage-layer-based nonvolatile memory (NVM) devices, such as Flash, ferroelectric RAM, or magnetic RAM, have limited reliability at high temperature (HT, T >; 200°C). On the contrary, storage-layer-free NVM devices based on a bistable nanoelectromechanical (NEM) mechanism and adhesion forces sho...

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Main Authors: Pott, Vincent, Vaddi, Ramesh, Chua, Geng Li, Lin, Julius Tsai Ming, Kim, Tony Tae-Hyoung
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/98616
http://hdl.handle.net/10220/11329
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-986162020-03-07T13:57:26Z Design optimization of pulsed-mode electromechanical nonvolatile memory Pott, Vincent Vaddi, Ramesh Chua, Geng Li Lin, Julius Tsai Ming Kim, Tony Tae-Hyoung School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Storage-layer-based nonvolatile memory (NVM) devices, such as Flash, ferroelectric RAM, or magnetic RAM, have limited reliability at high temperature (HT, T >; 200°C). On the contrary, storage-layer-free NVM devices based on a bistable nanoelectromechanical (NEM) mechanism and adhesion forces show excellent reliability at HT. This letter presents design optimization of an electrostatic NEM NVM device. The set/ reset principle is based on the pulsed-mode switching of a mechanically free electrode (the shuttle), which is placed inside a guiding pod, having two stable positions. Based on the shuttle kinematic equation, this letter derives key design and operation parameters, particularly optimization in terms of switching speed and switching energy. The small footprint of the shuttle NEM NVM makes it applicable to ultracompact and reliable data storage at HT. Accepted version 2013-07-12T06:22:55Z 2019-12-06T19:57:41Z 2013-07-12T06:22:55Z 2019-12-06T19:57:41Z 2012 2012 Journal Article https://hdl.handle.net/10356/98616 http://hdl.handle.net/10220/11329 10.1109/LED.2012.2201440 en IEEE electron device letters © 2012 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. The published version is available at DOI: [http://dx.doi.org/10.1109/LED.2012.2201440]. application/pdf
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Electrical and electronic engineering
spellingShingle DRNTU::Engineering::Electrical and electronic engineering
Pott, Vincent
Vaddi, Ramesh
Chua, Geng Li
Lin, Julius Tsai Ming
Kim, Tony Tae-Hyoung
Design optimization of pulsed-mode electromechanical nonvolatile memory
description Storage-layer-based nonvolatile memory (NVM) devices, such as Flash, ferroelectric RAM, or magnetic RAM, have limited reliability at high temperature (HT, T >; 200°C). On the contrary, storage-layer-free NVM devices based on a bistable nanoelectromechanical (NEM) mechanism and adhesion forces show excellent reliability at HT. This letter presents design optimization of an electrostatic NEM NVM device. The set/ reset principle is based on the pulsed-mode switching of a mechanically free electrode (the shuttle), which is placed inside a guiding pod, having two stable positions. Based on the shuttle kinematic equation, this letter derives key design and operation parameters, particularly optimization in terms of switching speed and switching energy. The small footprint of the shuttle NEM NVM makes it applicable to ultracompact and reliable data storage at HT.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Pott, Vincent
Vaddi, Ramesh
Chua, Geng Li
Lin, Julius Tsai Ming
Kim, Tony Tae-Hyoung
format Article
author Pott, Vincent
Vaddi, Ramesh
Chua, Geng Li
Lin, Julius Tsai Ming
Kim, Tony Tae-Hyoung
author_sort Pott, Vincent
title Design optimization of pulsed-mode electromechanical nonvolatile memory
title_short Design optimization of pulsed-mode electromechanical nonvolatile memory
title_full Design optimization of pulsed-mode electromechanical nonvolatile memory
title_fullStr Design optimization of pulsed-mode electromechanical nonvolatile memory
title_full_unstemmed Design optimization of pulsed-mode electromechanical nonvolatile memory
title_sort design optimization of pulsed-mode electromechanical nonvolatile memory
publishDate 2013
url https://hdl.handle.net/10356/98616
http://hdl.handle.net/10220/11329
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