Design optimization of pulsed-mode electromechanical nonvolatile memory

Storage-layer-based nonvolatile memory (NVM) devices, such as Flash, ferroelectric RAM, or magnetic RAM, have limited reliability at high temperature (HT, T >; 200°C). On the contrary, storage-layer-free NVM devices based on a bistable nanoelectromechanical (NEM) mechanism and adhesion forces sho...

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Bibliographic Details
Main Authors: Pott, Vincent, Vaddi, Ramesh, Chua, Geng Li, Lin, Julius Tsai Ming, Kim, Tony Tae-Hyoung
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2013
Subjects:
Online Access:https://hdl.handle.net/10356/98616
http://hdl.handle.net/10220/11329
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Institution: Nanyang Technological University
Language: English

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