Design optimization of pulsed-mode electromechanical nonvolatile memory

• Main Authors: Pott, Vincent, Vaddi, Ramesh, Chua, Geng Li, Lin, Julius Tsai Ming, Kim, Tony Tae-Hyoung
• Other Authors: School of Electrical and Electronic Engineering
• Format: Article
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Electrical and electronic engineering
• Online Access: https://hdl.handle.net/10356/98616; http://hdl.handle.net/10220/11329
• Institution: Nanyang Technological University

Storage-layer-based nonvolatile memory (NVM) devices, such as Flash, ferroelectric RAM, or magnetic RAM, have limited reliability at high temperature (HT, T >; 200°C). On the contrary, storage-layer-free NVM devices based on a bistable nanoelectromechanical (NEM) mechanism and adhesion forces sho...