Design optimization of pulsed-mode electromechanical nonvolatile memory
Storage-layer-based nonvolatile memory (NVM) devices, such as Flash, ferroelectric RAM, or magnetic RAM, have limited reliability at high temperature (HT, T >; 200°C). On the contrary, storage-layer-free NVM devices based on a bistable nanoelectromechanical (NEM) mechanism and adhesion forces sho...
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Main Authors: | , , , , |
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Other Authors: | |
Format: | Article |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/98616 http://hdl.handle.net/10220/11329 |
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Institution: | Nanyang Technological University |
Language: | English |