Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization

Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization

Email Print Request Permissions In this invited paper, a non-UHV and non-corrosive method using self-assembled monolayer (SAM) to passivate Cu surface to prevent oxidation and contamination is investigated. The final goal is to enable low temperature Cu-Cu bonding for high...

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Bibliographic Details
Main Authors: Tan, Chuan Seng, Lim, Dau Fatt, Peng, Lan, Li, Hong Yu
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/99123
http://hdl.handle.net/10220/12805
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Institution: Nanyang Technological University
Language: English
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Summary:Email Print Request Permissions In this invited paper, a non-UHV and non-corrosive method using self-assembled monolayer (SAM) to passivate Cu surface to prevent oxidation and contamination is investigated. The final goal is to enable low temperature Cu-Cu bonding for high density 3D IC realization.

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