Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization

Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization

Email Print Request Permissions In this invited paper, a non-UHV and non-corrosive method using self-assembled monolayer (SAM) to passivate Cu surface to prevent oxidation and contamination is investigated. The final goal is to enable low temperature Cu-Cu bonding for high...

Full description

Saved in:
Bibliographic Details
Main Authors: Tan, Chuan Seng, Lim, Dau Fatt, Peng, Lan, Li, Hong Yu
Other Authors: School of Electrical and Electronic Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/99123
http://hdl.handle.net/10220/12805
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Nanyang Technological University
Language: English
id sg-ntu-dr.10356-99123
record_format dspace
spelling sg-ntu-dr.10356-991232020-03-07T13:24:49Z Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization Tan, Chuan Seng Lim, Dau Fatt Peng, Lan Li, Hong Yu School of Electrical and Electronic Engineering IEEE International Workshop on Low Temperature Bonding for 3D Integration (3rd : 2012 : Tokyo, Japan) Email Print Request Permissions In this invited paper, a non-UHV and non-corrosive method using self-assembled monolayer (SAM) to passivate Cu surface to prevent oxidation and contamination is investigated. The final goal is to enable low temperature Cu-Cu bonding for high density 3D IC realization. 2013-08-01T06:07:20Z 2019-12-06T20:03:37Z 2013-08-01T06:07:20Z 2019-12-06T20:03:37Z 2012 2012 Conference Paper https://hdl.handle.net/10356/99123 http://hdl.handle.net/10220/12805 10.1109/LTB-3D.2012.6238046 en
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
description Email Print Request Permissions In this invited paper, a non-UHV and non-corrosive method using self-assembled monolayer (SAM) to passivate Cu surface to prevent oxidation and contamination is investigated. The final goal is to enable low temperature Cu-Cu bonding for high density 3D IC realization.
author2 School of Electrical and Electronic Engineering
author_facet School of Electrical and Electronic Engineering
Tan, Chuan Seng
Lim, Dau Fatt
Peng, Lan
Li, Hong Yu
format Conference or Workshop Item
author Tan, Chuan Seng
Lim, Dau Fatt
Peng, Lan
Li, Hong Yu
spellingShingle Tan, Chuan Seng
Lim, Dau Fatt
Peng, Lan
Li, Hong Yu
Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization
author_sort Tan, Chuan Seng
title Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization
title_short Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization
title_full Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization
title_fullStr Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization
title_full_unstemmed Passivation of Cu surface and its application in Cu-Cu bonding for high density 3D IC realization
title_sort passivation of cu surface and its application in cu-cu bonding for high density 3d ic realization
publishDate 2013
url https://hdl.handle.net/10356/99123
http://hdl.handle.net/10220/12805
_version_ 1681034728408350720

Similar Items