High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate

High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate

Inkjet printing is used to fabricate CN-TFT devices on PET substrate with 70 nm HfO2 gate dielectric. By varying the amount of printing, effective mobility can be raised to 43 cm2 V−1 s−1 with on/off ratio ≥ 104 for devices with channel length 160 μm. This demonstrates that inkjet printing is promis...

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Bibliographic Details
Main Authors: Lee, Chun Wei, Raman Pillai, Suresh Kumar, Luan, Xuena, Wang, Yilei, Li, Chang Ming, Chan-Park, Mary B.
Other Authors: School of Chemical and Biomedical Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/99135
http://hdl.handle.net/10220/10395
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Institution: Nanyang Technological University
Language: English
Description
Summary:Inkjet printing is used to fabricate CN-TFT devices on PET substrate with 70 nm HfO2 gate dielectric. By varying the amount of printing, effective mobility can be raised to 43 cm2 V−1 s−1 with on/off ratio ≥ 104 for devices with channel length 160 μm. This demonstrates that inkjet printing is promising for fabrication of high-performance devices in flexible electronics.

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