High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate

Inkjet printing is used to fabricate CN-TFT devices on PET substrate with 70 nm HfO2 gate dielectric. By varying the amount of printing, effective mobility can be raised to 43 cm2 V−1 s−1 with on/off ratio ≥ 104 for devices with channel length 160 μm. This demonstrates that inkjet printing is promis...

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Main Authors: Lee, Chun Wei, Raman Pillai, Suresh Kumar, Luan, Xuena, Wang, Yilei, Li, Chang Ming, Chan-Park, Mary B.
Other Authors: School of Chemical and Biomedical Engineering
Format: Article
Language:English
Published: 2013
Online Access:https://hdl.handle.net/10356/99135
http://hdl.handle.net/10220/10395
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-991352020-03-07T11:40:19Z High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate Lee, Chun Wei Raman Pillai, Suresh Kumar Luan, Xuena Wang, Yilei Li, Chang Ming Chan-Park, Mary B. School of Chemical and Biomedical Engineering Inkjet printing is used to fabricate CN-TFT devices on PET substrate with 70 nm HfO2 gate dielectric. By varying the amount of printing, effective mobility can be raised to 43 cm2 V−1 s−1 with on/off ratio ≥ 104 for devices with channel length 160 μm. This demonstrates that inkjet printing is promising for fabrication of high-performance devices in flexible electronics. 2013-06-14T03:35:51Z 2019-12-06T20:03:44Z 2013-06-14T03:35:51Z 2019-12-06T20:03:44Z 2012 2012 Journal Article Lee, C. W., Raman Pillai, S. K., Luan, X., Wang, Y., Li, C. M., & Chan-Park, M. B. (2012). High-Performance Inkjet Printed Carbon Nanotube Thin Film Transistors with High-k HfO2 Dielectric on Plastic Substrate. Small, 8(19), 2941-2947. 1613-6810 https://hdl.handle.net/10356/99135 http://hdl.handle.net/10220/10395 10.1002/smll.201200041 en Small © 2012 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
description Inkjet printing is used to fabricate CN-TFT devices on PET substrate with 70 nm HfO2 gate dielectric. By varying the amount of printing, effective mobility can be raised to 43 cm2 V−1 s−1 with on/off ratio ≥ 104 for devices with channel length 160 μm. This demonstrates that inkjet printing is promising for fabrication of high-performance devices in flexible electronics.
author2 School of Chemical and Biomedical Engineering
author_facet School of Chemical and Biomedical Engineering
Lee, Chun Wei
Raman Pillai, Suresh Kumar
Luan, Xuena
Wang, Yilei
Li, Chang Ming
Chan-Park, Mary B.
format Article
author Lee, Chun Wei
Raman Pillai, Suresh Kumar
Luan, Xuena
Wang, Yilei
Li, Chang Ming
Chan-Park, Mary B.
spellingShingle Lee, Chun Wei
Raman Pillai, Suresh Kumar
Luan, Xuena
Wang, Yilei
Li, Chang Ming
Chan-Park, Mary B.
High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate
author_sort Lee, Chun Wei
title High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate
title_short High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate
title_full High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate
title_fullStr High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate
title_full_unstemmed High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate
title_sort high-performance inkjet printed carbon nanotube thin film transistors with high-k hfo2 dielectric on plastic substrate
publishDate 2013
url https://hdl.handle.net/10356/99135
http://hdl.handle.net/10220/10395
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