High-performance inkjet printed carbon nanotube thin film transistors with high-k HfO2 dielectric on plastic substrate
Inkjet printing is used to fabricate CN-TFT devices on PET substrate with 70 nm HfO2 gate dielectric. By varying the amount of printing, effective mobility can be raised to 43 cm2 V−1 s−1 with on/off ratio ≥ 104 for devices with channel length 160 μm. This demonstrates that inkjet printing is promis...
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Main Authors: | , , , , , |
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格式: | Article |
語言: | English |
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2013
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在線閱讀: | https://hdl.handle.net/10356/99135 http://hdl.handle.net/10220/10395 |
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