Through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics

In this paper, fabrication of through-silicon vias (TSV) with different diameters ranging from 60 to 150 μm is reported. It was observed that at the low current density of 20 mA/cm2, all the through-holes with different diameters are filled with copper without voids and pores. At higher current dens...

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Main Authors: Lin, Nay, Miao, Jianmin
Other Authors: School of Mechanical and Aerospace Engineering
Format: Conference or Workshop Item
Language:English
Published: 2013
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Online Access:https://hdl.handle.net/10356/99156
http://hdl.handle.net/10220/17196
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Institution: Nanyang Technological University
Language: English
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spelling sg-ntu-dr.10356-991562020-03-07T13:26:33Z Through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics Lin, Nay Miao, Jianmin School of Mechanical and Aerospace Engineering International Nanoelectronics Conference (5th : 2013 : Singapore) DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects In this paper, fabrication of through-silicon vias (TSV) with different diameters ranging from 60 to 150 μm is reported. It was observed that at the low current density of 20 mA/cm2, all the through-holes with different diameters are filled with copper without voids and pores. At higher current density of 40 mA/cm2, however, the pillars with diameters bigger than 100 μm tend to have voids at the middle portion of pillars. Focused ion beam (FIB) examination of the copper pillars fabricated with low current density reveals the difference in grain size and internal structure of the grain along the length of the pillar. Current-potential characters of solution were studied for the electrolyte bath used in the process. It shows the limiting current density around 40-60mA/cm2. The microstructures of TSV fabricated at low and high current densities are investigated and it shows that high current density produces porous copper with void at the core of TSV. 2013-11-01T01:50:52Z 2019-12-06T20:03:57Z 2013-11-01T01:50:52Z 2019-12-06T20:03:57Z 2013 2013 Conference Paper Lin, N., & Miao, J. (2013). Through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics. 2013 IEEE 5th International Nanoelectronics Conference (INEC), pp.381-384. https://hdl.handle.net/10356/99156 http://hdl.handle.net/10220/17196 10.1109/INEC.2013.6466053 en
institution Nanyang Technological University
building NTU Library
country Singapore
collection DR-NTU
language English
topic DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
spellingShingle DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
Lin, Nay
Miao, Jianmin
Through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics
description In this paper, fabrication of through-silicon vias (TSV) with different diameters ranging from 60 to 150 μm is reported. It was observed that at the low current density of 20 mA/cm2, all the through-holes with different diameters are filled with copper without voids and pores. At higher current density of 40 mA/cm2, however, the pillars with diameters bigger than 100 μm tend to have voids at the middle portion of pillars. Focused ion beam (FIB) examination of the copper pillars fabricated with low current density reveals the difference in grain size and internal structure of the grain along the length of the pillar. Current-potential characters of solution were studied for the electrolyte bath used in the process. It shows the limiting current density around 40-60mA/cm2. The microstructures of TSV fabricated at low and high current densities are investigated and it shows that high current density produces porous copper with void at the core of TSV.
author2 School of Mechanical and Aerospace Engineering
author_facet School of Mechanical and Aerospace Engineering
Lin, Nay
Miao, Jianmin
format Conference or Workshop Item
author Lin, Nay
Miao, Jianmin
author_sort Lin, Nay
title Through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics
title_short Through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics
title_full Through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics
title_fullStr Through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics
title_full_unstemmed Through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics
title_sort through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics
publishDate 2013
url https://hdl.handle.net/10356/99156
http://hdl.handle.net/10220/17196
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