Through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics

• Main Authors: Lin, Nay, Miao, Jianmin
• Other Authors: School of Mechanical and Aerospace Engineering
• Format: Conference or Workshop Item
• Language: English
• Published: 2013
• Subjects: DRNTU::Engineering::Materials::Microelectronics and semiconductor materials::Nanoelectronics and interconnects
• Online Access: https://hdl.handle.net/10356/99156; http://hdl.handle.net/10220/17196
• Institution: Nanyang Technological University

In this paper, fabrication of through-silicon vias (TSV) with different diameters ranging from 60 to 150 μm is reported. It was observed that at the low current density of 20 mA/cm2, all the through-holes with different diameters are filled with copper without voids and pores. At higher current dens...