Through-silicon via fabrication with pulse-reverse electroplating for high density nanoelectronics
In this paper, fabrication of through-silicon vias (TSV) with different diameters ranging from 60 to 150 μm is reported. It was observed that at the low current density of 20 mA/cm2, all the through-holes with different diameters are filled with copper without voids and pores. At higher current dens...
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Main Authors: | , |
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Other Authors: | |
Format: | Conference or Workshop Item |
Language: | English |
Published: |
2013
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Subjects: | |
Online Access: | https://hdl.handle.net/10356/99156 http://hdl.handle.net/10220/17196 |
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Institution: | Nanyang Technological University |
Language: | English |