The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers

Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent char...

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Main Authors: Goh, Wang Ling, Raza, S. H., Montgomery, J. H., Armstrong, B. M., Gamble, H. S.
其他作者: School of Electrical and Electronic Engineering
格式: Article
語言:English
出版: 2009
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在線閱讀:https://hdl.handle.net/10356/99895
http://hdl.handle.net/10220/5989
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機構: Nanyang Technological University
語言: English
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總結:Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent characteristics with an exponential current–voltage (I V ) relationship over nine orders of magnitude and an ideality factor of 1.005, under forward bias conditions. The reverse leakage current is low with a minority carrier lifetime of typically 500 µs. The diodes show no evidence of stress induced defects or degraded performance due to W migration during processing. The SMI substrate is therefore shown to be compatible with standard manufacturing processes.