The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers
Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent char...
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| Main Authors: | , , , , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
2009
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| 主題: | |
| 在線閱讀: | https://hdl.handle.net/10356/99895 http://hdl.handle.net/10220/5989 |
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| 總結: | Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent characteristics with an exponential current–voltage (I V ) relationship over nine orders of magnitude and an ideality factor of 1.005, under forward bias conditions. The reverse leakage current is low with a minority carrier lifetime of typically 500 µs. The diodes show no evidence of stress induced defects or degraded performance due to W migration during processing. The SMI substrate is therefore shown to be compatible with standard manufacturing processes. |
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