The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers

Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent char...

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Bibliographic Details
Main Authors: Goh, Wang Ling, Raza, S. H., Montgomery, J. H., Armstrong, B. M., Gamble, H. S.
Other Authors: School of Electrical and Electronic Engineering
Format: Article
Language:English
Published: 2009
Subjects:
Online Access:https://hdl.handle.net/10356/99895
http://hdl.handle.net/10220/5989
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Institution: Nanyang Technological University
Language: English

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