The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers

• Main Authors: Goh, Wang Ling, Raza, S. H., Montgomery, J. H., Armstrong, B. M., Gamble, H. S.
• 其他作者: School of Electrical and Electronic Engineering
• 格式: Article
• 語言: English
• 出版: 2009
• 主題: DRNTU::Engineering::Electrical and electronic engineering
• 在線閱讀: https://hdl.handle.net/10356/99895; http://hdl.handle.net/10220/5989

Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent char...