The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers
Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent char...
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sg-ntu-dr.10356-998952020-03-07T14:00:31Z The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers Goh, Wang Ling Raza, S. H. Montgomery, J. H. Armstrong, B. M. Gamble, H. S. School of Electrical and Electronic Engineering DRNTU::Engineering::Electrical and electronic engineering Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent characteristics with an exponential current–voltage (I V ) relationship over nine orders of magnitude and an ideality factor of 1.005, under forward bias conditions. The reverse leakage current is low with a minority carrier lifetime of typically 500 µs. The diodes show no evidence of stress induced defects or degraded performance due to W migration during processing. The SMI substrate is therefore shown to be compatible with standard manufacturing processes. Published version 2009-08-03T01:27:30Z 2019-12-06T20:13:10Z 2009-08-03T01:27:30Z 2019-12-06T20:13:10Z 1999 1999 Journal Article Goh, W. L., Raza, S. H., Montgomery, J. H., Armstrong, B. M., & Gamble, H. S. (1999). The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers. IEEE Electron Device Letters, 20(5), 212-214. 0741-3106 https://hdl.handle.net/10356/99895 http://hdl.handle.net/10220/5989 10.1109/55.761018 en IEEE electron device letters IEEE Electron Device Letters © 1999 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder. http://www.ieee.org/portal/site. 3 p. application/pdf |
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DRNTU::Engineering::Electrical and electronic engineering Goh, Wang Ling Raza, S. H. Montgomery, J. H. Armstrong, B. M. Gamble, H. S. The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers |
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Results are reported on the performance of diffused p+n diode structures manufactured on a novel silicon-on-metalon-insulator (SMI) substrate. This substrate consists of a thin single crystal silicon layer on top of a tungsten disilicide covered oxidized silicon wafer. The diodes show excellent characteristics with an exponential current–voltage (I V ) relationship over nine orders of magnitude and an ideality factor of 1.005, under forward bias conditions. The reverse leakage current is low with a minority carrier lifetime of typically 500 µs. The diodes show no evidence of stress induced defects or degraded performance due to W migration during processing. The SMI substrate is therefore shown to be compatible with standard manufacturing processes. |
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School of Electrical and Electronic Engineering |
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School of Electrical and Electronic Engineering Goh, Wang Ling Raza, S. H. Montgomery, J. H. Armstrong, B. M. Gamble, H. S. |
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Article |
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Goh, Wang Ling Raza, S. H. Montgomery, J. H. Armstrong, B. M. Gamble, H. S. |
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Goh, Wang Ling |
title |
The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers |
title_short |
The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers |
title_full |
The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers |
title_fullStr |
The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers |
title_full_unstemmed |
The manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers |
title_sort |
manufacture and performance of diodes made in dielectrically isolated silicon substrates containing buried metallic layers |
publishDate |
2009 |
url |
https://hdl.handle.net/10356/99895 http://hdl.handle.net/10220/5989 |
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1681039654557581312 |