Epitaxial growth of yittria-stabilized zirconia oxide thin film on natively oxidized silicon wafer without an amorphous layer
10.1088/0268-1242/15/8/309
Saved in:
Main Authors: | Wang, S.J., Ong, C.K., You, L.P., Xu, S.Y. |
---|---|
Other Authors: | PHYSICS |
Format: | Article |
Published: |
2014
|
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/113078 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Crystalline zirconia oxide on silicon as alternative gate dielectrics
by: Wang, S.J., et al.
Published: (2014) -
Oxidation study of hydrogenated amorphous silicon carbide films
by: Choi, W.K., et al.
Published: (2014) -
On the Ni–Si phase transformation with/without native oxide
by: Mangelinck, D., et al.
Published: (2013) -
The electronic barrier height of silicon native oxides at different oxidation stages
by: Qin, H. L., et al.
Published: (2013) -
Solid phase epitaxy during Ge condensation from amorphous SiGe layer on silicon-on-insulator substrate
by: Balakumar, S., et al.
Published: (2014)