Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

10.1016/j.susc.2006.03.045

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Bibliographic Details
Main Authors: Zhang, J., Turner, S.G., Chiam, S.Y., Liu, R., Tok, E.S., Wee, A.T.S., Huan, A.C.H., Kelly, I., Mulcahy, C.P.A.
Other Authors: PHYSICS
Format: Article
Published: 2014
Subjects:
Growth
Molecular beam epitaxy
Secondary ion mass spectroscopy
Surface segregation
X-ray diffraction
Online Access:http://scholarbank.nus.edu.sg/handle/10635/116590
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Institution: National University of Singapore
Description
Summary:10.1016/j.susc.2006.03.045

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