Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

10.1016/j.susc.2006.03.045

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Bibliographic Details
Main Authors:	Zhang, J., Turner, S.G., Chiam, S.Y., Liu, R., Tok, E.S., Wee, A.T.S., Huan, A.C.H., Kelly, I., Mulcahy, C.P.A.
Other Authors:	INSTITUTE OF ENGINEERING SCIENCE
Format:	Article
Published:	2014
Subjects:	Growth Molecular beam epitaxy Secondary ion mass spectroscopy Surface segregation X-ray diffraction
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/116590
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-116590
record_format	dspace
spelling	sg-nus-scholar.10635-1165902024-11-15T07:05:17Z Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching Zhang, J. Turner, S.G. Chiam, S.Y. Liu, R. Tok, E.S. Wee, A.T.S. Huan, A.C.H. Kelly, I. Mulcahy, C.P.A. INSTITUTE OF ENGINEERING SCIENCE PHYSICS Growth Molecular beam epitaxy Secondary ion mass spectroscopy Surface segregation X-ray diffraction 10.1016/j.susc.2006.03.045 Surface Science 600 11 2288-2292 SUSCA 2014-12-12T07:51:44Z 2014-12-12T07:51:44Z 2006-06-01 Article Zhang, J., Turner, S.G., Chiam, S.Y., Liu, R., Tok, E.S., Wee, A.T.S., Huan, A.C.H., Kelly, I., Mulcahy, C.P.A. (2006-06-01). Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching. Surface Science 600 (11) : 2288-2292. ScholarBank@NUS Repository. https://doi.org/10.1016/j.susc.2006.03.045 00396028 http://scholarbank.nus.edu.sg/handle/10635/116590 000238642800011 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Growth Molecular beam epitaxy Secondary ion mass spectroscopy Surface segregation X-ray diffraction
spellingShingle	Growth Molecular beam epitaxy Secondary ion mass spectroscopy Surface segregation X-ray diffraction Zhang, J. Turner, S.G. Chiam, S.Y. Liu, R. Tok, E.S. Wee, A.T.S. Huan, A.C.H. Kelly, I. Mulcahy, C.P.A. Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching
description	10.1016/j.susc.2006.03.045
author2	INSTITUTE OF ENGINEERING SCIENCE
author_facet	INSTITUTE OF ENGINEERING SCIENCE Zhang, J. Turner, S.G. Chiam, S.Y. Liu, R. Tok, E.S. Wee, A.T.S. Huan, A.C.H. Kelly, I. Mulcahy, C.P.A.
format	Article
author	Zhang, J. Turner, S.G. Chiam, S.Y. Liu, R. Tok, E.S. Wee, A.T.S. Huan, A.C.H. Kelly, I. Mulcahy, C.P.A.
author_sort	Zhang, J.
title	Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching
title_short	Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching
title_full	Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching
title_fullStr	Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching
title_full_unstemmed	Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching
title_sort	sharp n-type doping profiles in si/sige heterostructures produced by atomic hydrogen etching
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/116590
_version_	1821204729437356032

Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

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