Sharp n-type doping profiles in Si/SiGe heterostructures produced by atomic hydrogen etching

• Main Authors: Zhang, J., Turner, S.G., Chiam, S.Y., Liu, R., Tok, E.S., Wee, A.T.S., Huan, A.C.H., Kelly, I., Mulcahy, C.P.A.
• Other Authors: PHYSICS
• Format: Article
• Published: 2014
• Subjects: Growth; Molecular beam epitaxy; Secondary ion mass spectroscopy; Surface segregation; X-ray diffraction
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/116590
• Institution: National University of Singapore

10.1016/j.susc.2006.03.045