Probing the carrier concentration profiles in phosphorus-implanted germanium using infrared spectroscopic ellipsometry

10.1063/1.4913299

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Bibliographic Details
Main Authors: D'Costa, V.R., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: American Institute of Physics Inc. 2016
Online Access:http://scholarbank.nus.edu.sg/handle/10635/128146
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Institution: National University of Singapore